Waxaa daabacay Sawirrada Buuggaagta ee Internetka
LNA Broadband ee loogu talagalay UWB-ga oo isticmaalaya habka ugu sarreeya ee Wicitaanka
I. Hordhac
Horumarinta hababka isgaarsiinta wireless-ka ee xawaaraha sare leh waxay gelinaysaa codsiga sii kordhaya ee isku-dhafka ah ee qiimaha jaban ee qalabka RF ee leh bandwidth badan oo GHz ah oo ku shaqeeya isticmaalka tamarta ugu yar iyo korantada sahayda. Ultra-wideband (IEEE 802.15.3a) waxay u muuqataa sida tignoolajiyada cusub ee awood u leh heerka wareejinta xogta sare (ilaa 1 Gb/s) masaafo gaaban gudahood (10 m) oo awood hoose ah. Farsamadani waxay u isticmaashaa codsiyada qaarkood sida shabakadaha aagga shakhsiyeed ee wireless-ka (WPANs), oo bixisa jawi gudbinta maqalka, muqaalka, iyo xogta kale ee bandwidth-sare ah. Mid ka mid ah hababka la soo jeediyay in la isticmaalo xajmiga 3.1-10.6-GHz ee loo qoondeeyay nidaamyada UWB, waxay isticmaashaa Qaybta Frequency Division Multiplexin OFDM modulation oo leh 14 qaybood oo hoose mid kasta oo qaada 528-MHz ballac band iyo qorshe soo noqnoqosho degdeg ah. 1]. Gudaha OFDM, gudbiye-hoosaadyada f requencies waa mid siman midba midka kale. Habkani waxa uu meesha ka saarayaa wada-hadalka u dhexeeya kanaal-hoosaadka, sidaas awgeedna looma baahna xidhidhiyaha ilaalada ka dhexeeya. In kasta oo heerka aan la dhammaystirin, LNA-da ballaadhan ee-dhamaadka hore ayaa gabi ahaanba lama huraan u ah iyada oo aan loo eegin qaab dhismeedka qaataha. Cod-weyneyuhu waa inuu buuxiyaa shuruudo dhowr ah, tusaale ahaan is-dhexgalka shaandhada hore iyo anteenada, gelinta cod-weyneeye waa inuu ku dhawaadaa 50 ka sarreeya guutada UWB ee la doonayo. Si kastaba ha ahaatee faa'iido ku filan oo leh ballac ballaadhan oo ballaaran si ay u dhaafto qaylada isku-darka, sawirka qaylada hoose si loo hagaajiyo dareenka qaataha, isticmaalka tamarta yar si loo kordhiyo nolosha batteriga, meel yar oo dhiman si loo yareeyo kharashka, xasilloonida shuruud la'aanta ah iyo linearity wanaagsan ayaa ah xuduudaha muhiimka ah. Waxaa ka dhexeeya is-dhaafsi dhow. Guud ahaan marka la hagaajiyo mid ka mid ah, kuwa kale waa la burburiyaa.
II. Marxaladda galitaanka
Qaabaynta albaab-wadareed iyo Cascode waa laba nooc oo habab ah oo inta badan loo isticmaalo in lagu naqshadeeyo heerka galitaanka LNA ee wareegyada CMOS, halka Qaab-dhismeedka Common-Gate iyo Cascode ay bixiyaan isku-dheellitirnaan ballaadhan iyo band-cidhiidhi ah siday u kala horreeyaan. Si kastaba ha ahaatee marxaladda albaabada guud waxay leedahay shaxan qaylo ah oo gudaha ah oo ka soo horjeeda marxaladda Cascode waana in la isticmaalo farsamooyinka joojinta buuqa.
Si kastaba ha ahaatee galinta impedance waxaa dejiya eexda & saamiga W/L. Dhab ahaantii qaab-dhismeedkani waxa uu tixgelinayaa heerka xorriyadda transconductance ee transistor-ka iyo sidoo kale iyada oo la dooranayo culeys ku habboon (isku-dar wanaagsan oo ah inductor iyo capacitors iyada oo la tixgelinayo saameynta awoodda dulin iyo jidhka), waxay bixisaa isbarbardhigga gelinta ballaaran ee la heli karo. Culayskan waa inuu u dhigmaa r_ds1. Maaddaama gm uu beddelo, is-hortaagga gelinta iyo baaxadda baaxadda u dhigma ayaa qiyaastii la mid ah f_T aaladda.
Capacitance transistor-ka dulinka C_gs wuxuu bilaabaa doorar marka inta jeer ee hawlgalka uu bilaabo inuu kordho. Codsiga band cidhiidhiga ah, inductor shunt ah ayaa lagu daraa marxaladda gelinta si ay uga jawaabto C_gsto kor u qaadida impedance u dhigma inta jeer ee la doonayo. Si kastaba ha ahaatee badi codsiyada band cidhiidhiga ah ee CMOS, kascode LNA oo leh hoos u dhac dareen leh ayaa la door bidayaa laakiin ka soocida gelinta wax soo saarka iyo ka tagista dariiqa C_gd, Common-Gate LNA waxay qabataa go'doomin iyo xasilooni ka sii fiican marka loo eego Common-Source LNA.
III. Naqshadeynta WAREEGA IYO AFKA
LNA-da ballaadhan ee la soo jeediyay waxa lagu muujiyay sawirka 1. Waxa ay ka kooban tahay marxaladda wax-is-gelinta iyo heerka il-wadaaga. Shaxda 1 waxay muujinaysaa qiyamka naqshadaynta CMOS LNA ee la soo jeediyay. Eexda-chip-ka ka baxsan-T waxay bixisaa eexda albaabka M_3 iyo dariiqa DC ee hadda M_1. Inductor-ka taxanaha ah L_4 waxa uu si dheeraad ah ula jaan qaadayaa awoodda il-xidhka-gelinta ee M_3, taas oo keentay baaxad weyn iyo xoogaa hadhaaga ah ee u sarreeya jawaabta soo noqnoqda [17]. Awoodaha dulin ee M_2
Jaantus. 1. La soo jeediyay Bayaan-Baadhaad-baajinta LNA
SHAXDA I
QIIMAHA NIDAAMKA EE CMOS LNA ee la soo jeediyay
L_in 4nH (W/L)3 135/0.18
L_0 0.5nH (W/L)4 37.5/0.18
L_1 4.5nH (W/L)5 45/0.18
L_2 2.5nH C_in,C_(out,) C_3 2PF
L_3 0.9nH C_1,C_2 1PF
L_4 2.2nH R_1 290Ω
L_5 0.8nH R_2 135Ω
(W/L)1 18/0.18 R_3 40Ω
(W/L)2 30/0.18
iyo M_3 waxay sameeyaan qaab dhismeedka jaranjarada LC oo leh inductor L_0. Resistors load DC R_1 iyo R_2 waxaa lagu daraa inductors shunt peaking L_1 iyo L_2 siday u kala horreeyaan si loo kordhiyo xawaaraha wareegga si wax ku ool ah [10]. Inductor-ka taxanaha ah ee ugu sarreeya L_2 wuxuu kaloo la jaanqaadayaa wadarta guud ee awoodda dulin C_d2 iyo C_d3 ee biya-mareenka M_2 iyo M_3. Tan iyo markii caabiyaha xamuulka, R_3, lagu daray si loo yareeyo Q factor ee L_3 faa'iido siman. Dhererka kanaalka ugu yar ee 0.18μm ayaa loo tixgeliyaa dhammaan transistor-yada ku jira wareegga la soo jeediyay si loo yareeyo awoodda dulin loona hagaajiyo waxqabadka soo noqnoqda. Marxaladda isha guud waxay fidisaa xadhkaha goos gooska, waxay bixisaa go'doon wanaagsan waxayna kordhisaa faa'iidada soo noqnoqda. Xaqiiqda marxaladda wax gelinta iyo heerka isha caadiga ah waxay taageertaa kororka awoodda-soo noqnoqda ee hooseeya iyo kororka kororka sarreeya, siday u kala horreeyaan. Isku darka jawaabaha soo noqnoqda ee labadaba waxay horseedaan koror koronto. Transistor M5 waxa kale oo uu caawiyaa marxaladda isha caadiga ah si ay u kordhiso oo ay u fududaato faa'iidada soo noqnoqda. Jaantuska 2 waxa uu muujinayaa saamaynta M5 ku leedahay meertada S21.
Jaantuska 2 Saamaynta M5 ee cabbirka S21
Jaantuska 3 saamaynta M1 sida heerka wax gelinta ayaa la baaraa. Halbeegga NF iyo S11 ee la ekaysiiyay ayaa marka la barbar dhigo kiiska M1 la damiyay. Waxaa jira is dhaafsi dhow oo u dhexeeya NF iyo S11. Marka M_1 la shido, NF waa la kordhiyaa oo cabbirka S21 waa la dhimay iyada oo la adeegsanayo awood isku mid ah iyo baaxad la mid ah, laakiin liddi ku ah isbarbardhigga la aqbali karo ayaa la gaari doonaa. Xoog saarista dheeriga ah waa in la siiyaa sifooyinka sanqadha ee qaab dhismeedka Common-Gate ee marxaladda gelinta, in kasta oo transistor M_1 uu bixiyo isbarbar-dhigga ballaaran, wuxuu leeyahay muuqaal sanqadh sare leh.
Jaantus. 3. Sawirka sanqadha la ekaaday iyo go'doominta gelinta ee M1 shiday oo dami.
Si loo baaro waxqabadka sanqadha, qaabka sanqadha transistor-ka MOS oo leh sawaxanka kulaylka kanaalka ayaa la isticmaalaa. Sida ku cad shaxanka 4, dayacitaanka albaabka iyo dhawaaqyada boodboodka ah oo u maleynaya inay ku habboon yihiin falanqayntan, PSD ee sawaxanka kulaylka kanaalka (i_ (n, d) ^ 2 ) ̅ waxaa la bixiyaa sida
(i_(n,d)^2 ) ̅=4KTγg_do ∆f=4KT γ/α g_m ∆f (1)
Aaway Boltzmann joogto ah, waa heerkulka saxda ah ee Kelvin, γ waa iskudarka MOS transistor ee sanqadha kulaylka kanaalka, α waxaa lagu qeexaa sida saamiga transconductance g_mand eber-eexda dheecaanka g_ds waxaa loo cabbiraa siday u kala horreeyaan.
Isla'egyada soo socdaa waxay sharxayaan sawirka qaylada R_1, M_1, M_2 iyo M_3 inay gacan ka geystaan tirada guud ee qaylada [1]
Jaantuska. 4. Mabda'a qaabaynta qaylada
Haddii xaaladda (2) la dejiyo dhawaaqa M_1 waa laga saaray [1].
g_m2 R_1=g_m3 R_s (2)
Isla'egyada soo socdaa waxay sharxayaan shaxanka qaylada R_1, M_2 iyo M_3 inay gacan ka geystaan tirada guud ee qaylada.
F_R1=(4KT〖R_1 g_m2〗^2)/(KTR_s (g_m3+〖g_m2 R〗_1/R_s )^2)=R_s/R_1 (3)
F_M2=(4KTγ/αg_m2 )/(KTR_s 〖(g_m3+g_1m1 (Z_(L_R1) ‖r_o1) g_m2)〗^2 ) = γ/α 1/ (g_m2 R_1 ) F_R1 (4)
F_M3=(4KTγ/α g_m3)/(KTR_s 〖(g_m3+g_m1 (Z_(L_R1) ‖r_o1) g_m2)〗^2 )=(4γ/α)/(〖g_m3 R〗_s 〖(1+R) 〗^1) (2)
Haddaba, tirada guud ee qaylada waxa lagu qiyaasi karaa sida(6)
F_Total=R_s/R_1 (1+γ/α 1/(g_m2 R_1 )) +(4 γ/α)/(〖g_m3 R〗_s
IV.NATIIJADA JIDKA
Wareegga waxaa lagu sawiray 0.18μm TSMC maktabada Hspice software. Dhammaan jilitaannada waxaa la sameeyaa iyadoo la tixgalinayo 50Ω gelinta iyo wax soo saarka. Jaantuska.5(a) awood korodhsi iyo go'doominta LNA waa la ekaysiiyay. Celceliska awoodda korodhka ayaa ah qiyaastii 14.5 dB oo leh 0.7 dB oo ka sarreeya inta jeer ee soo noqnoqda. Go'doominta gadaasha ayaa ka yar -35dB. Jaantuska.5(b) waxa ay tusinaysaa sawirka qaylada, gelinta iyo go'doominta wax soo saarka. NF waxa ay ka yar tahay 2.9 dB, S11 waxa ay ka yar tahay-14.8db iyo S22 waxa ay ka yar tahay -10dB.
(B)
Jaantus 5.(a) Awood korodhsi oo la ekaysiiyay oo dib u celin kara go'doon
"Fig.6" waxay muujinaysaa IIP3 ee wareegga iyo inta jeer.
Jaantuska. 7. La cabbiray IIP3 iyo inta jeer
Natiijooyinka shaqadan waxaa lagu muujiyey "SHAXAN II" waxaana la barbardhigay CMOS LNAs oo dhowaan la daabacay.
SHAXDA 2 KOOBAN WAXQABADKA
VI. GUNAANAD
Warqadani waxay soo bandhigaysaa naqshad cusub oo qaab dhismeedka UWB LNA oo ku salaysan tignoolajiyada RFCMOS ee caadiga ah. Is-waafajinta gelinta ku qanacsan iyo waxqabadka buuqa ayaa la helaa ka dib marka la eego isdhaafsiga u dhexeeya carqaladaynta wax gelinta ee marxaladda albaabada guud iyo keeda. waxqabadka qaylada. Tirada qaylada la cabbiray ayaa ka yar 2.9 dB in ka badan 3.1-10.6-GHz. Faa'iidada gurigu waxay ku habboon tahay in lagu xuso dhammaan naqshadeynta LNA iyo faa'iidada awoodda la ekayd waa 14.5 ± 0.7 dB.
tixraacyada
[1] Chih-Fan Liao, iyo Shen-Iuan Liu," Buuq Baahsan-joojinta CMOS LNA ee 3.1-10.6-GHz qaataha UWB 42, MAYA. 2, Febraayo 2007
[2] Kuang-Chi He, Ming-Tsung Li, Chen-Ming Li, iyo Jenn-Hwan Tarng, Isbarbar-dhigga-RC Codsiyada UWB Codsiyada IEEE GANACSIGA EE SHARCIYADA IYO NIDAAMKA–II: KOOBAN CAD, VOL. 57, MAYA. 8, Ogosto 2010
[3] Zhe-Yang Huang, Che-Cheng Huang, Chun-Chieh Chen, Chung-Chih Hung iyo Chia-Min Chen
CMOS Cod-weyneeye Cod-hooseeya oo lagu soo celiyay 3.1-10.6GHz Ultra-Wideband System" ©2009 IEEE
[4] Yang Lu, Kiat Seng Yeo, Alper Cabuk, Jianguo Ma, Manh Anh Do, iyo Zhenghao Lu WAREEGTADA IYO NIDAAMKA–I: Warqado Joogta Ah, Vol. 3.1, MAYA. 10.6, Ogosto 53
[5] Ali Mirvakili,Mohammad Yavari,Farshid Raissi ”LNA toosan oo dib loo isticmaalay 1-10.6GHz UWB qaataha”IEICE Electronics Express,Vol.5,No.21,908-914
[6] S. Stroh, "Ultra-wideband: multimedia unplugged," IEEE Spectrum, vol. 40, maya. 9, bogga 23-27, Sebteembar 2003.
[7] Vladimir Aparin iyo Lawrence E. Larson, Fellow, IEEE" Hababka Sarraynta Derivative ee La Bedelay ee Linearizing FET Amplifiers-hooseeya" IEEE GANACSIGA KU SAABSAN ARAGTIDA MICROWVE IYO TECHNIQUES, VOL. 53, MAYA. 2, Febraayo 2005
[8] A. Batra et al., "Multi-band OFDM soo jeedinta lakabka jireed," IEEE 802.15-03/267r5, Jul. 2003.
[9] Shih-Chih Chen, Ruey-Lue Wang, Hslang-Chen Kuo iyo Ming-Lung Kung Chang-Sing Gao ee Asia-Pacific Shirarka Microwave 3.1.
[10] SS Mohan, MDM Hershenson, SP Boyd, iyo TH Lee. 35, maya. 3, bogga 346-355, Maarso 2000.
[11] Zhe-Yang Huang, Che-Cheng Huang, Chun-Chieh Chen, Chung-Chih Hung iyo Chia-Min Chen
[12] Chunyu Xin, Edgar S'anchez-Sinencio" Farsamo LINEARIZATION OO LOOGU TALAGALAY RF NOISE AMPLIFIER"
[13] Jianyun Hu, Yunliang Zhu, iyo Hui Wu
gudaha 0.18μm Digital CMOS” 978-1-4244-1856-5/08/$ 25.00 ©2008 IEEE
[14] J.-H. Lee, C.-C. Chen iyo Y.-S. Lin” 0.18 lm 3.1-10.6 GHz CMOS UWB LNA oo leh 11.4_0.4 dB faa'iido iyo 100.7_17.4 ps kooxda dib u dhigista 22 No. 2007
[15] C.-P. Liang, C.-W. Huang, Y.-K. Lin iyo S.-J. Chung”3-10 GHz cod-weyneeye dhawaq-ballaaran ultra-ballaaran oo leh farsamo cusub oo isbarbar-dhig ah” Warqadaha ELECTRONICS-KA 5 No. 2010
[16] Hongrui Wang, Li Zhang, iyo Zhiping Yu, Fellow, "A Wideband Inductorless LNA oo leh jawaab celin maxalli ah iyo buuqa baabi'inta codsiyada tamarta hoose ee tamarta" IEEE GANACSIGA GUDOOYINKA IYO NIDAAMKA-I: waraaqo joogto ah, VOL. 57, MAYA. 8, Ogosto 2010
[17] TH Lee, Naqshadeynta Wareegyada Isku-dhafan ee Raadiyaha-soo noqnoqda ee CMOS, ed 1st. New York: Jaamacadda Cambridge. Press, 1998.
[18] Chunyu Xin, Edgar S'anchez-Sinencio" Farsamo LINEARIZATION oo loogu talagalay RF LOWNOISE AMPLIFIER"ISCAS 2004
[19] Ali Mirvakili, Mohammad Yavari" Buuq-joojinta CMOS LNA Naqshadeynta Kooxda Sare ee UWB DS-CDMA Qaatayaasha" Wareegyada iyo Nidaamyada, 2009. ISCAS 2009. IEEE International Symposium on
[20] S. Galal iyo B. Razavi, "40 Gb/s amplifier iyo ESD ilaalinta wareegga 0.18 _mCMOS technology," gudaha IEEE ISSCC Dig. Farsamada Waraaqaha, Febraayo 2004, bogga 480-481.