30KV 1000PF 300KVA RF Power Capacitor| Laser | Semiconductor Wafer-Fab | Plasma

Description

30KV 1000PF 300KVA RF Power Capacitor| Laser | Semiconductor
Wafer-Fab | Plasma

MATERIAL
Capacitor elements made from Class 1 ceramic dielectric with noble
metal electrodes.
Flexible connection terminals copper/brass, silver plated, to allow for series
and parallel interconnection.

FINISH
Noble metal electrodes and terminals protective lacquered.
The contoured insulating rim is additionally glazed.

FEATURES
• Low losses
• High reliability
• High voltage ratings

APPLICATIONS
These high technology are designed for usage in high frequency Induction
heating and welding
equipment were high voltage ratings are required.

CAPACITANCE RANGE
50 pF to 6000 pF

CAPACITANCE TOLERANCE
± 10 % ，± 20 %

CERAMIC DIELECTRIC
N750: ( – 750 ppm/ ℃ )

RATED VOLTAGE
3.3 to 30 kVp (= RF peak voltage + DC voltage)

DIELECTRIC STRENGTH TEST
UR<=15KV:200% of UR
UR> 15KV:150% of UR

DISSIPATION FACTOR
Max. 0.006 %

INSULATION RESISTANCE
Min. 10 000 MΩ (at 25 °C)

OPERATING TEMPERATURE RANGE
– 40 °C to + 85 °C

HVC produce high voltage RF power capacitor.
Business inquiry to [email protected]